DocumentCode
3153043
Title
Leakage current and self-heating in 650 nm resonant-cavity LEDs
Author
Hild, K. ; Sale, T.E. ; Hirotani, M. ; Mizuno, Y. ; Kato, T.
Author_Institution
Surrey Univ., Guildford, UK
fYear
2003
fDate
22-27 June 2003
Firstpage
183
Abstract
This paper investigates the contributions of leakage current and self-heating to the temperature sensitivity. The amount of self-heating and leakage current is estimated and plotted for a constant light output with increasing temperature for both CW and pulsed operation, and the radiative current density for 650 nm emitting GaInP based resonant cavity light emitting diodes (RCLEDs) is calculated using a drift diffusion model (DDM).The model simulates the distribution of charge carriers within the structure and their recombination mechanisms. The radiative current in GaInP quantum wells is also extracted and plotted.
Keywords
III-V semiconductors; cavity resonators; current density; electron-hole recombination; gallium compounds; indium compounds; leakage currents; light emitting diodes; optical resonators; semiconductor quantum wells; thermo-optical effects; 650 nm; CW operation; GaInP; GaInP quantum well; charge carrier; constant light output; drift diffusion model; leakage current; pulsed operation; radiative current density; recombination mechanism; resonant-cavity LED; self-heating; temperature sensitivity; Current measurement; Heat transfer; Heating; Leakage current; Light emitting diodes; Optical fibers; Optical pulses; Pulse measurements; Resonance; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN
0-7803-7734-6
Type
conf
DOI
10.1109/CLEOE.2003.1312244
Filename
1312244
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