DocumentCode :
3153043
Title :
Leakage current and self-heating in 650 nm resonant-cavity LEDs
Author :
Hild, K. ; Sale, T.E. ; Hirotani, M. ; Mizuno, Y. ; Kato, T.
Author_Institution :
Surrey Univ., Guildford, UK
fYear :
2003
fDate :
22-27 June 2003
Firstpage :
183
Abstract :
This paper investigates the contributions of leakage current and self-heating to the temperature sensitivity. The amount of self-heating and leakage current is estimated and plotted for a constant light output with increasing temperature for both CW and pulsed operation, and the radiative current density for 650 nm emitting GaInP based resonant cavity light emitting diodes (RCLEDs) is calculated using a drift diffusion model (DDM).The model simulates the distribution of charge carriers within the structure and their recombination mechanisms. The radiative current in GaInP quantum wells is also extracted and plotted.
Keywords :
III-V semiconductors; cavity resonators; current density; electron-hole recombination; gallium compounds; indium compounds; leakage currents; light emitting diodes; optical resonators; semiconductor quantum wells; thermo-optical effects; 650 nm; CW operation; GaInP; GaInP quantum well; charge carrier; constant light output; drift diffusion model; leakage current; pulsed operation; radiative current density; recombination mechanism; resonant-cavity LED; self-heating; temperature sensitivity; Current measurement; Heat transfer; Heating; Leakage current; Light emitting diodes; Optical fibers; Optical pulses; Pulse measurements; Resonance; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN :
0-7803-7734-6
Type :
conf
DOI :
10.1109/CLEOE.2003.1312244
Filename :
1312244
Link To Document :
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