DocumentCode
3153051
Title
Optimization of the antireflection coating of blue GaN laser diodes and their characterization in an external cavity in Littrow and Littman-Metcalf configuration
Author
Hildebrandt, Lars ; Knispel, Richard ; Stry, Sandra ; Sacher, Joachim R.
Author_Institution
Sacher Lasertechnik Group, Marburg, Germany
fYear
2003
fDate
22-27 June 2003
Firstpage
184
Abstract
The objective of this paper is to implement a blue emitting GaN-based laser diodes in an external cavity to provide a laser source with emission properties appropriate for high resolution spectroscopy around 410 nm and the optimization procedure with 40 GaN diodes is also described.
Keywords
III-V semiconductors; antireflection coatings; emissivity; gallium compounds; laser cavity resonators; optical properties; semiconductor lasers; spectroscopy; wide band gap semiconductors; 410 nm; GaN; Littman-Metcalf configuration; Littrow configuration; antireflection coating; blue GaN laser diode; emission property; external cavity; high resolution spectroscopy; laser source; optimization procedure; Coatings; Diode lasers; Fabry-Perot; Gallium nitride; Laser tuning; Optical tuning; Reflectivity; Spectroscopy; Threshold current; Tunable circuits and devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN
0-7803-7734-6
Type
conf
DOI
10.1109/CLEOE.2003.1312245
Filename
1312245
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