• DocumentCode
    3153271
  • Title

    Four point probe structures with buried electrodes for the electrical characterization of ultrathin conducting films

  • Author

    Groenland, A.W. ; Wolters, R.A.M. ; Kovalgin, A.Y. ; Schmitz, J.

  • Author_Institution
    MESA & Inst. for Nanotechnol., Univ. of Twente, Enschede
  • fYear
    2009
  • fDate
    March 30 2009-April 2 2009
  • Firstpage
    191
  • Lastpage
    195
  • Abstract
    Test structures for the electrical characterization of ultrathin conductive (ALD) films are presented based on buried electrodes on which the ultrathin film is deposited. This work includes test structure design and fabrication, and the electrical characterization of ALD TiN films down to 4 nm. It is shown that these structures can be used successfully to characterize sub 10 nm films.
  • Keywords
    conducting materials; materials testing; titanium compounds; vapour deposited coatings; ALD film; TiN; buried electrode; electrical characterization; four point probe structure; test structure design; test structure fabrication; ultrathin conducting film; Conductive films; Electrodes; Fabrication; Probes; Semiconductor films; Sputter etching; Testing; Tin; Transistors; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 2009. ICMTS 2009. IEEE International Conference on
  • Conference_Location
    Oxnard, CA
  • Print_ISBN
    978-1-4244-4259-1
  • Type

    conf

  • DOI
    10.1109/ICMTS.2009.4814639
  • Filename
    4814639
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3153271