DocumentCode
3153333
Title
Comparison of IV-VI semiconductor microcavity lasers for the mid-infrared with active regions of different dimensionality
Author
Schwarzl, T. ; Boberl, M. ; Heiss, W. ; Springholz, G. ; Fürst, J. ; Pascher, H.
Author_Institution
Inst. fur Halbleiterphysik, Johannes Kepler Univ., Linz, Austria
fYear
2003
fDate
22-27 June 2003
Firstpage
196
Abstract
In this paper, we present a comparison between IV-VI vertical-cavity surface-emitting lasers (VCSELs) containing active regions of different dimensionality but with a nearly identical optical design of the cavity. In addition, the same optical set-up as well as pump source was used for laser excitation and characterization. This allows studying the influence of the dimensionality of the active material on the laser properties.
Keywords
IV-VI semiconductors; microcavity lasers; optical design techniques; optical pumping; surface emitting lasers; IV-VI semiconductor microcavity laser comparison; IV-VI vertical-cavity surface-emitting laser; active material; laser excitation; laser property; mid-infrared active regions; optical design; pump source; Gas lasers; Laser excitation; Microcavities; Pump lasers; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN
0-7803-7734-6
Type
conf
DOI
10.1109/CLEOE.2003.1312257
Filename
1312257
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