Practical Considerations for Measurements of Test Structures for Dielectric Characterization

Author

Chen, Wenbin ; McCarthy, Kevin G. ; Mathewson, Alan

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. Coll. Cork, Cork

fYear

2009

fDate

March 30 2009-April 2 2009

Firstpage

221

Lastpage

225

Abstract

This paper presents a method for measuring the complex permittivity of dielectric material on a dielectric/metal stack. A series of circular capacitor and transmission line test structures are designed and fabricated. The methodology has been verified by measuring the dielectric constant of a known SiO₂ layer using Capacitance-Voltage (C-V) measurement and scattering parameter (S-parameter) measurements. The combination of C-V measurement and S-parameter measurement is shown to be suitable for characterization of dielectric material on the complex cross-sections.

Keywords

S-parameters; dielectric materials; metals; permittivity; permittivity measurement; C-V measurement; S-parameter; capacitance-voltage measurement; circular capacitor; complex permittivity; dielectric characterization; dielectric constant; dielectric material; dielectric-metal stack; scattering parameter measurements; test structures; transmission line test structures; Capacitance measurement; Capacitance-voltage characteristics; Capacitors; Dielectric constant; Dielectric materials; Dielectric measurements; Permittivity measurement; Scattering parameters; Testing; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2009. ICMTS 2009. IEEE International Conference on

Conference_Location

Oxnard, CA

Print_ISBN

978-1-4244-4259-1

Type

conf

DOI

10.1109/ICMTS.2009.4814646

Filename

4814646