DocumentCode
3153388
Title
Hybrid Silicon-GaAs PA for MIMO Applications
Author
Schmidt, Dominik J. ; Costantini, Alberto ; Walia, Ravinder S. ; Majkic, Branislav ; Sover, Raanan ; Ravid, Shmuel ; Hayden, Joseph ; Peterson, Bradford E. ; Cohen, Emanuel ; Ding, Yi
Author_Institution
Adv. Technol. & Wireless/Radio Group, Intel Corp., Santa Clara, CA
fYear
2006
fDate
10-12 Sept. 2006
Firstpage
75
Lastpage
78
Abstract
This paper introduces the design techniques for a family of Wi-Fi PA with a new approach based on maximally reducing the GaAs MMIC area and resizing it with external integrated components. This paper proposes the development of a set PA for the integrated front-end module (FEM) of 802.11a/b/g/n and in the near future for 802.16d/e. In the multi-mode concept, a technological partition called the "stripped" PA has been adopted to minimize the overall manufacturing cost without impacting the performance of the PA. In particular the PA MMIC cell, manufactured in a commercial InGaP/GaAs technology, has been reduced to minimum size and complexity keeping the performances level at the highest standards currently available. Results on both a standard linear PA design approach used for a SISO system and vehicle for the validation of the approach and on a more challenging architecture which aims to enable the MIMO configuration through a dramatic increase in efficiency adopting a smart-biasing system plus the benefit of the digital pre-distortion are presented. These approaches combine to provide performance such as PAE comparable with the state of the art SISO and MIMO PAs, while meeting the stringent requirements like EVM required by standard and specifications
Keywords
III-V semiconductors; MIMO communication; MMIC power amplifiers; gallium arsenide; indium compounds; wireless LAN; FEM; InGaP-GaAs; InGaP-GaAs technology; MIMO application; MMIC cell; Wi-Fi; front-end module; linear PA design approach; monolithic microwave integrated circuit; multimode concept; power amplifier; Costs; Energy consumption; Gallium arsenide; Heterojunction bipolar transistors; Intelligent vehicles; MIMO; MMICs; Manufacturing; Power amplifiers; WiMAX; HBT; Pre-distortion; Wi-Fi; WiMax; power amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Wireless Technology, 2006. The 9th European Conference on
Conference_Location
Manchester
Print_ISBN
2-9600551-5-2
Type
conf
DOI
10.1109/ECWT.2006.280438
Filename
4057441
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