Broad-band superluminescent diode based on multiquantum well (InGa)PAs heterostructure at 1550 nm

Author

Mamedov, D.S. ; Prokhorov, V.V. ; Yakubovich, S.D.

Author_Institution

SUPERLUM DIODES Ltd., Moscow, Russia

fYear

2003

fDate

22-27 June 2003

Firstpage

202

Abstract

In present work SLDs fabrication of (InGa)PAs heterostructure were studied. For broad band superluminescent diodes, optical sensors based on "white light" interferometry-wide emission spectrum (small coherence length) is the main requirement. Record values of spectral linewidth are obtainable for SLDs based on quantum-well heterostructures.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light coherence; light interferometry; luminescence; luminescent devices; optical fabrication; optical sensors; semiconductor quantum wells; spectral line breadth; superluminescent diodes; (InGa)PAs heterostructure; 1550 nm; InGaPAs; broad-band superluminescent diode; multiquantum well; quantum-well heterostructures; small coherence length; spectral linewidth; superluminescent diode fabrication; white light interferometry; wide emission spectrum; Optical feedback; Optical interferometry; Optical pumping; Optical saturation; Optical sensors; Optical waveguides; Power generation; Stimulated emission; Superluminescent diodes; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on

Print_ISBN

0-7803-7734-6

Type

conf

DOI

10.1109/CLEOE.2003.1312263

Filename

1312263