DocumentCode
3153677
Title
Investigation of NBTI recovery induced by conventional measurements for pMOSFETs with ultra-thin SiON gate dielectrics
Author
Jin, Lei ; Xu, Mingzhen
Author_Institution
Peking Univ., Beijing
fYear
2007
fDate
15-18 Oct. 2007
Firstpage
38
Lastpage
42
Abstract
The NBTI recovery induced by conventional measurements and its physical origin are studied. It is demonstrated that, with carefully designed experiments using conventional slow equipments, the measurement induced recovery can be evaluated and investigated. It is re-affirmed that the measurement induced recovery is primarily due to the discharge of bulk traps in ultra-thin SiON. The passivation of interface traps plays a less important role, as compared with discharge of bulk traps.
Keywords
MOSFET; semiconductor device measurement; semiconductor device reliability; silicon compounds; NBTI recovery; SiON; bulk trap; interface trap; pMOSFET; ultrathin SiON gate dielectrics; Degradation; Dielectric measurements; MOSFETs; Measurement techniques; Niobium compounds; Phase measurement; Stress measurement; Time measurement; Titanium compounds; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2007. IRW 2007. IEEE International
Conference_Location
S. Lake Tahoe, CA
ISSN
1930-8841
Print_ISBN
978-1-4244-1771-9
Electronic_ISBN
1930-8841
Type
conf
DOI
10.1109/IRWS.2007.4469218
Filename
4469218
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