A study of distributed switching processes in IGBTs and other power bipolar devices

Author

Leturcq, Ph

Author_Institution

Inst. Nat. des Sci. Appliquees, Toulouse

Volume

1

fYear

1997

fDate

22-27 Jun 1997

Firstpage

139

Abstract

This paper proposes a simplified approach to the analysis of switching processes in power bipolar devices, which preserves the essential distributed nature of charge dynamics. This approach is based on new solving methods for the ambipolar diffusion equation with moving boundaries. Only a limited mathematical and computational effort is needed to arrive at an in-depth knowledge of the relationships between the external current and voltage variations across terminals and the internal evolution of carrier distribution. This provides bases for device modelling and guidelines for optimum device utilisation

Keywords

carrier density; diffusion; insulated gate bipolar transistors; power semiconductor switches; semiconductor device models; switching; IGBT; ambipolar diffusion equation; carrier distribution; charge dynamics; device modelling; distributed switching processes; external current variation; external voltage variation; moving boundaries; optimum device utilisation; power bipolar devices; Charge carrier processes; Charge carriers; Equations; Insulated gate bipolar transistors; Performance analysis; Power semiconductor switches; Semiconductor devices; Space charge; Transient analysis; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1997. PESC '97 Record., 28th Annual IEEE

Conference_Location

St. Louis, MO

ISSN

0275-9306

Print_ISBN

0-7803-3840-5

Type

conf

DOI

10.1109/PESC.1997.616708

Filename

616708