• DocumentCode
    315373
  • Title

    A physically based parameter extraction scheme for SCR models

  • Author

    Göhler, L. ; Langer, T. ; Sigg, J.

  • Author_Institution
    Univ. der Bundeswehr Munchen, Neubiberg, Germany
  • Volume
    1
  • fYear
    1997
  • fDate
    22-27 Jun 1997
  • Firstpage
    148
  • Abstract
    This paper presents a physically based parameter extraction scheme for SCR models. The methods are discussed and demonstrated with an example. The comparison between simulated and measured device behaviour shows agreement within 15% tolerance
  • Keywords
    parameter estimation; semiconductor device models; thyristors; SCR models; measured device behaviour; parameter determination; physically based parameter extraction scheme; silicon controlled rectifier; simulated device behaviour; Capacitance measurement; Charge carrier lifetime; Data mining; Doping profiles; Equations; Manufacturing; Paper technology; Parameter extraction; Semiconductor process modeling; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 1997. PESC '97 Record., 28th Annual IEEE
  • Conference_Location
    St. Louis, MO
  • ISSN
    0275-9306
  • Print_ISBN
    0-7803-3840-5
  • Type

    conf

  • DOI
    10.1109/PESC.1997.616712
  • Filename
    616712
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=315373