DocumentCode
3153768
Title
New approach for the assessment of the effect of plasma induced damage on MOS devices and subsequent design manual rules
Author
Martin, Andreas
Author_Institution
Infineon Technol. AG, Munich
fYear
2007
fDate
15-18 Oct. 2007
Firstpage
57
Lastpage
62
Abstract
This paper develops a completely new approach for the definition of PID design rules which are relevant for IC design and also test structure layout. The required stress and measurement sequences for the assessment of PID effects and investigation of the design rules on the various geometries of MOS devices are described and discussed. The overall IC yield can be improved when some additional measures are considered and included in the product design.
Keywords
MIS devices; integrated circuit design; integrated circuit reliability; semiconductor device reliability; MOS devices; PID design rules; plasma induced damage; Analog integrated circuits; Antenna measurements; Contacts; Degradation; Electrodes; Geometry; Integrated circuit interconnections; MOS devices; MOSFETs; Plasma devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report, 2007. IRW 2007. IEEE International
Conference_Location
S. Lake Tahoe, CA
ISSN
1930-8841
Print_ISBN
978-1-4244-1771-9
Electronic_ISBN
1930-8841
Type
conf
DOI
10.1109/IRWS.2007.4469222
Filename
4469222
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