Title :
Electromigration multistress pattern technique for copper drift velocity and Black’s parameters extraction
Author :
Doyen, L. ; Federspiel, X. ; Arnaud, L. ; Terrier, F. ; Wouters, Y. ; Girault, V.
Author_Institution :
NXP Semicond., Crolles
Abstract :
Package electromigration tests were performed on dual damascene copper interconnects issued from the 90, 65 and 45 nm-node technologies. By varying the stress conditions during the steady state regime of the resistance increase, we study drift velocity evolution as a function of the current density j. Thus we show some large deviation of the Black´s law, which assumes a linear dependence of the lifetime with j. Finally we have determined the Black´s exponent n in a broad range of current density j (2.5-50 mA/mum2). For 250 mum long lines, a n=1 is obtained between 10 and 20 mA/mum2, it increases up to 2 for j=2.5 mA/mum2.
Keywords :
copper; current density; electromigration; integrated circuit interconnections; nanoelectronics; Black parameters extraction; current density; drift velocity evolution; dual damascene copper interconnects; electromigration multistress pattern technique; package electromigration tests; size 250 mum; size 45 nm; size 65 nm; size 90 nm; steady state regime; Copper; Current density; Electromigration; Electron mobility; Packaging; Parameter extraction; Performance evaluation; Steady-state; Stress; Testing;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2007. IRW 2007. IEEE International
Conference_Location :
S. Lake Tahoe, CA
Print_ISBN :
978-1-4244-1771-9
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2007.4469225