Title :
A 22-39 GHz passive mixer in SiGe:C bipolar technology
Author :
Issakov, V. ; Knapp, Herbert ; Wojnowski, M. ; Thiede, A. ; Simbuerger, W.
Author_Institution :
Univ. Paderborn, Paderborn, Germany
Abstract :
Numerous industrial and automotive applications pose challenging requirements on receiver front-end linearity and DC power consumption. A convenient solution is the implementation of passive mixers. This is usually realized at microwave frequencies using diodes. This paper presents an on-chip integrated single-balanced passive mixer in Infineon´s B7HF200 SiGe:C technology. The topology uses diode-connected npn transistors and a hybrid ring coupler implemented using onchip lumped elements. The mixer offers a good conversion loss below 10 dB over a very wide frequency range of 22 - 39 GHz at a low LO power of 3 dBm. The circuit exhibits an input-referred 1dB compression point of -1.5 dBm and an IIP3 of 8.8 dBm. The chip size including the pads is 0.33 mm2. This passive bipolar mixer is integrated in SiGe:C technology without a Schottky diode option.
Keywords :
Ge-Si alloys; MMIC mixers; bipolar integrated circuits; carbon; DC power consumption; MMIC mixers; Schottky diode option; SiGe:C; bipolar technology; frequency 22 GHz to 39 GHz; hybrid ring coupler; on-chip integrated single-balanced passive mixer; on-chip lumped elements; receiver front-end linearity; Automotive applications; Circuit topology; Coupling circuits; Energy consumption; Integrated circuit technology; Linearity; Microwave frequencies; Microwave transistors; Mixers; Schottky diodes;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5518125
