Programming conditions for silicided poly-Si or copper electrically programmable fuses

Author

Suto, Hiroyuki ; Mori, Shigetaka ; Kanno, Michihiro ; Nagashima, Naoki

Author_Institution

Sony Corp., Atsugi

fYear

2007

fDate

15-18 Oct. 2007

Firstpage

84

Lastpage

89

Abstract

Dynamical programming processes in electrically programmable (writable) fuses (e-fuses) with a narrow link of p-doped Ni-silicided poly-Si or Cu were studied, through slow I-V measurements of an e-fuse and a blowing FET made separately. The two I-V curves depicted in the same graph gave valuable knowledge of programming processes and suitable programming conditions. Maps of final resistance values for the two e-fuses are also useful when they are made in the pulse-width/pulsed-voltage plane.

Keywords

dynamic programming; electric fuses; field effect transistors; nickel compounds; silicon compounds; I-V measurements; blowing FET; dynamic programming process; e-fuse; electrically programmable fuses; p-doped nickel-silicided copper; p-doped nickel-silicided poly-silicon; pulse-width-pulsed-voltage plane; Copper; Dynamic programming; Electric variables measurement; Electrical resistance measurement; Electrodes; Electronic mail; FETs; Fuses; Space vector pulse width modulation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2007. IRW 2007. IEEE International

Conference_Location

S. Lake Tahoe, CA

ISSN

1930-8841

Print_ISBN

978-1-4244-1771-9

Electronic_ISBN

1930-8841

Type

conf

DOI

10.1109/IRWS.2007.4469227

Filename

4469227