Title :
Integrated receivers up to 220 GHz utilizing GaAs-mHEMT technology
Author :
Zirath, Herbert ; Wadefalk, N. ; Kuzhuharov, R. ; Gunnarsson, Sten E. ; Cherednichenko, Sergey ; Angelov, Iltcho ; Abbasi, Mohammadjavad ; Hansson, B. ; Vassilev, Vessen ; Svedin, J. ; Rudner, S. ; Kallfass, I. ; Leuther, A.
Author_Institution :
Chalmers Univ., Goteborg, Sweden
fDate :
Jan. 9 2009-Dec. 11 2009
Abstract :
The status of integrated receivers for remote sensing and communication applications from 60 GHz to higher frequencies is reviewed. Recent receiver results for silicon and III-V technologies are compared with Schottky diode receivers.
Keywords :
III-V semiconductors; Schottky diodes; high electron mobility transistors; radio receivers; remote sensing; GaAs; HEMT technology; III-V technologies; Schottky diode receivers; communication applications; integrated receivers; remote sensing; CMOS technology; Frequency; Gallium arsenide; HEMTs; MMICs; Millimeter wave communication; Millimeter wave technology; Noise figure; Schottky diodes; Silicon; millimeterwave receiver MMIC;
Conference_Titel :
Radio-Frequency Integration Technology, 2009. RFIT 2009. IEEE International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-5031-2
Electronic_ISBN :
978-1-4244-5032-9
DOI :
10.1109/RFIT.2009.5383658
