DocumentCode
3153912
Title
Integrated receivers up to 220 GHz utilizing GaAs-mHEMT technology
Author
Zirath, Herbert ; Wadefalk, N. ; Kuzhuharov, R. ; Gunnarsson, Sten E. ; Cherednichenko, Sergey ; Angelov, Iltcho ; Abbasi, Mohammadjavad ; Hansson, B. ; Vassilev, Vessen ; Svedin, J. ; Rudner, S. ; Kallfass, I. ; Leuther, A.
Author_Institution
Chalmers Univ., Goteborg, Sweden
fYear
2009
fDate
Jan. 9 2009-Dec. 11 2009
Firstpage
225
Lastpage
228
Abstract
The status of integrated receivers for remote sensing and communication applications from 60 GHz to higher frequencies is reviewed. Recent receiver results for silicon and III-V technologies are compared with Schottky diode receivers.
Keywords
III-V semiconductors; Schottky diodes; high electron mobility transistors; radio receivers; remote sensing; GaAs; HEMT technology; III-V technologies; Schottky diode receivers; communication applications; integrated receivers; remote sensing; CMOS technology; Frequency; Gallium arsenide; HEMTs; MMICs; Millimeter wave communication; Millimeter wave technology; Noise figure; Schottky diodes; Silicon; millimeterwave receiver MMIC;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio-Frequency Integration Technology, 2009. RFIT 2009. IEEE International Symposium on
Conference_Location
Singapore
Print_ISBN
978-1-4244-5031-2
Electronic_ISBN
978-1-4244-5032-9
Type
conf
DOI
10.1109/RFIT.2009.5383658
Filename
5383658
Link To Document