Title :
New defect generation in nitrogen contained nMOS high-k devices
Author :
Heh, Dawei ; Kirsch, Paul D. ; Young, Chadwin D. ; Kang, Chang Yong ; Bersuker, Gennadi
Author_Institution :
SEMATECH, Austin
Abstract :
Hole trap generation during positive bias temperature instability (PBTI) in nMOS high-k transistors is reported. It is suggested that the generation of these hole traps is associated with nitrogen species that mighty be incorporated in the gate stack through processes that contain nitrogen.
Keywords :
MOSFET; nitrogen; PBTI; defect generation; hole trap generation; nMOS high-k transistor; nitrogen; positive bias temperature instability stress; Current measurement; Dielectric substrates; Electron traps; High K dielectric materials; High-K gate dielectrics; MOS devices; Nitrogen; Pulse measurements; Stress measurement; Threshold voltage;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2007. IRW 2007. IEEE International
Conference_Location :
S. Lake Tahoe, CA
Print_ISBN :
978-1-4244-1771-9
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2007.4469231
