Title :
Characterization of interface and bulk oxide traps in SiC MOSFETs with epitaxialy grown and implanted channels
Author :
Gurfinkel, M. ; Kim, Jinwoo ; Potbhare, S. ; Xiong, H.D. ; Cheung, K.P. ; Suehle, J. ; Bernstein, J.B. ; Shapira, Yoram ; Lelis, A.J. ; Habersat, D. ; Goldsman, N.
Author_Institution :
Tel Aviv Univ., Tel Aviv
Abstract :
The results show that devices with "as grown" SiO2 have a much higher density of bulk oxide traps than devices after post oxidation annealing in NO environment. The amount of oxide fixed charge is clearly not affected by the annealing process. Devices fabricated on ion-implanted channels exhibit only a small increase in the bulk oxide trap density and the fixed charge. On the other hand, the density of the interface traps is increased dramatically. This suggests that the damage due to the ion-implantation process is mainly interfacial. In contrast to Si devices, this ion-implantation damage is not completely repaired, even after annealing.
Keywords :
MOSFET; epitaxial growth; interface states; ion implantation; oxidation; silicon compounds; wide band gap semiconductors; MOSFET; epitaxialy grown-implanted channels; interface-bulk oxide traps; ion-implanted channels; post oxidation annealing; Annealing; Capacitance-voltage characteristics; Channel bank filters; Doping; Educational institutions; MOSFETs; Oxidation; Silicon carbide; Thermal conductivity; Threshold voltage;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2007. IRW 2007. IEEE International
Conference_Location :
S. Lake Tahoe, CA
Print_ISBN :
978-1-4244-1771-9
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2007.4469233