• DocumentCode
    3154118
  • Title

    Wideband 60GHz on-chip antenna with an artificial magnetic conductor

  • Author

    Chu, H. ; Guo, Y.X. ; Lin, F. ; Shi, X.-Q.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
  • fYear
    2009
  • fDate
    Jan. 9 2009-Dec. 11 2009
  • Firstpage
    307
  • Lastpage
    310
  • Abstract
    A wideband 60-GHz on-chip antenna fabricated with a 0.18um CMOS process with an artificial magnetic conductor (AMC) is presented. A shield plane is patterned to create mesh and inserted between the on-chip antenna and the grounded lossy CMOS substrate. With this arrangement, a frequency selective surface is produced and the meshed shield plane provides high wave impedance over a certain bandwidth around 60 GHz. Meanwhile, the meshed shield plane behaves as an AMC and the reflected wave is in phase with the incident wave. Therefore, the loss induced by the CMOS substrate can be minimized. Both the AMC and the patch antenna are optimized to deliver a wideband operation covering 56-66 GHz. The size of the on-chip antenna including the AMC is 1.55mm by 1.55mm. Compared with the conventional on-chip antenna having a typical gain of -10dBi to -8dBi, the proposed on-chip antenna with an AMC can offer a gain of -2.5dBi to -1.5 dBi in the band. Measurement has verified the prediction.
  • Keywords
    CMOS integrated circuits; millimetre wave antennas; CMOS process; CMOS substrate; artificial magnetic conductor; frequency 55 GHz to 60 GHz; frequency selective surface; meshed shield plane; patch antenna; size 1.55 mm; wideband on-chip antenna; Bandwidth; Broadband antennas; CMOS process; CMOS technology; Conductors; Electromagnetic reflection; Patch antennas; Radio frequency; Silicon; Surface impedance; 0.18-µm CMOS process; 60-GHz radio; On-chip antenna; artificial magnetic conductor (AMC);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio-Frequency Integration Technology, 2009. RFIT 2009. IEEE International Symposium on
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4244-5031-2
  • Electronic_ISBN
    978-1-4244-5032-9
  • Type

    conf

  • DOI
    10.1109/RFIT.2009.5383667
  • Filename
    5383667