Title :
Wideband power amplifier MMICs utilizing GaN on SiC
Author :
Reese, E. ; Allen, David ; Lee, Chi-Kwan ; Nguyen, Thin
Author_Institution :
TriQuint Semiconductor, United States
Abstract :
The application of GaN on SiC technology to wideband power amplifier MMICs is explored. The unique characteristics of GaN on SiC applied to reactively matched and distributed wideband circuit topologies are discussed, including comparison to GaAs technology. A 2 – 18 GHz 11W power amplifier MMIC is presented as an example.
Keywords :
Broadband amplifiers; Circuit topology; Gallium arsenide; Gallium nitride; MMICs; Power amplifiers; Semiconductor optical amplifiers; Silicon carbide; Wide band gap semiconductors; Wideband;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5518141
