DocumentCode
3154136
Title
Wideband power amplifier MMICs utilizing GaN on SiC
Author
Reese, E. ; Allen, David ; Lee, Chi-Kwan ; Nguyen, Thin
Author_Institution
TriQuint Semiconductor, United States
fYear
2010
fDate
23-28 May 2010
Firstpage
1
Lastpage
1
Abstract
The application of GaN on SiC technology to wideband power amplifier MMICs is explored. The unique characteristics of GaN on SiC applied to reactively matched and distributed wideband circuit topologies are discussed, including comparison to GaAs technology. A 2 – 18 GHz 11W power amplifier MMIC is presented as an example.
Keywords
Broadband amplifiers; Circuit topology; Gallium arsenide; Gallium nitride; MMICs; Power amplifiers; Semiconductor optical amplifiers; Silicon carbide; Wide band gap semiconductors; Wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location
Anaheim, CA
ISSN
0149-645X
Print_ISBN
978-1-4244-6056-4
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2010.5518141
Filename
5518141
Link To Document