Title :
A 2.4-GHz CMOS power amplifier design for low power wireless sensors network
Author :
Haridas, Kuruveettil ; Teo, Hui T. ; Yuan, Xiaojun
Author_Institution :
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
fDate :
Jan. 9 2009-Dec. 11 2009
Abstract :
Power amplifier is the key component in wireless transceiver and its realization and integration in standard CMOS technology is essential for the efficient and cost effective wireless SoCs. In this work, we present a fully integrated differential power amplifier operating at 2.45 GHz realized in 0.18 ¿M RF CMOS process. The designed power amplifier has a built in capability to modulate the base band data using On - Off Keying (OOK) while providing a single ended output power of over +6.4 dBm to 50 ¿ load impedance. Measured Power Added Efficiency (PAE) at the P1 dB of this amplifier operating at 1.8 V is around 18% and a gain flatness of less than 1 dB is observed over the frequency band 2400-2480 MHz.
Keywords :
CMOS integrated circuits; power amplifiers; wireless sensor networks; CMOS power amplifier; RF CMOS process; frequency 2.4 MHz to 2480 MHz; fully integrated differential power amplifier; low power wireless sensor network; on-off keying; power added efficiency; single ended output power; voltage 1 V; CMOS process; CMOS technology; Costs; Differential amplifiers; Power amplifiers; Process design; Radio frequency; Radiofrequency amplifiers; Transceivers; Wireless sensor networks; Wireless Sensor Network; driver amplifier; modulation; power amplifiers;
Conference_Titel :
Radio-Frequency Integration Technology, 2009. RFIT 2009. IEEE International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-5031-2
Electronic_ISBN :
978-1-4244-5032-9
DOI :
10.1109/RFIT.2009.5383675
