A 2.4-GHz CMOS power amplifier design for low power wireless sensors network

Author

Haridas, Kuruveettil ; Teo, Hui T. ; Yuan, Xiaojun

Author_Institution

Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore

fYear

2009

fDate

Jan. 9 2009-Dec. 11 2009

Firstpage

299

Lastpage

302

Abstract

Power amplifier is the key component in wireless transceiver and its realization and integration in standard CMOS technology is essential for the efficient and cost effective wireless SoCs. In this work, we present a fully integrated differential power amplifier operating at 2.45 GHz realized in 0.18 Â¿M RF CMOS process. The designed power amplifier has a built in capability to modulate the base band data using On - Off Keying (OOK) while providing a single ended output power of over +6.4 dBm to 50 Â¿ load impedance. Measured Power Added Efficiency (PAE) at the P1 dB of this amplifier operating at 1.8 V is around 18% and a gain flatness of less than 1 dB is observed over the frequency band 2400-2480 MHz.

Keywords

CMOS integrated circuits; power amplifiers; wireless sensor networks; CMOS power amplifier; RF CMOS process; frequency 2.4 MHz to 2480 MHz; fully integrated differential power amplifier; low power wireless sensor network; on-off keying; power added efficiency; single ended output power; voltage 1 V; CMOS process; CMOS technology; Costs; Differential amplifiers; Power amplifiers; Process design; Radio frequency; Radiofrequency amplifiers; Transceivers; Wireless sensor networks; Wireless Sensor Network; driver amplifier; modulation; power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio-Frequency Integration Technology, 2009. RFIT 2009. IEEE International Symposium on

Conference_Location

Singapore

Print_ISBN

978-1-4244-5031-2

Electronic_ISBN

978-1-4244-5032-9

Type

conf

DOI

10.1109/RFIT.2009.5383675

Filename

5383675