DocumentCode :
3154420
Title :
HV-IGBT drives and their applications
Author :
Bhooplapur, Prabhuraj ; Schmitt, Benoit P. ; Neeser, Gerhard
Author_Institution :
Dept. of Metals Ind., Siemens Adv. Eng. Pte. Ltd., Singapore
Volume :
2
fYear :
1999
fDate :
1999
Firstpage :
585
Abstract :
Universal in low voltage inverters and widely in use for a decade, the IGBT (insulated gate bipolar transistor) has proven its reliability in numerous applications. The one drawback is the limitation in output power achievable at these low voltages. Series connection of low voltage IGBTs to achieve higher output voltages is not an elegant and practical solution due to the problem of absolutely simultaneous switching necessary for safe operation. The recent introduction of HV-IGBTs (high-voltage IGBT) has finally made it possible to build the medium voltage drive up to 6.6 kV. HV IGBTs presently in use have a blocking voltage rating of 3300 V at 1200 A and devices of 6500 V at 600 A will be available in the near future. The standard three-level inverter output voltage of 2.3 kV can be realised with only one element whereas output voltages of 3.3 kV and 4.16 kV are realised with two elements in series. Some of the applications include rubber industry, ship propulsion, chemical and metals industries
Keywords :
DC-AC power convertors; insulated gate bipolar transistors; invertors; power bipolar transistors; semiconductor device reliability; 1200 A; 2.3 kV; 3.3 kV; 3300 V; 4.16 kV; 6.6 kV; 600 A; 6500 V; HV-IGBT drives; applications; chemical industries; insulated gate bipolar transistor; low-voltage inverters; metals industries; output power; reliability; rubber industry; ship propulsion; three-level inverter; Chemical elements; Chemical industry; Insulated gate bipolar transistors; Inverters; Low voltage; Marine vehicles; Medium voltage; Power generation; Propulsion; Rubber industry;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and Drive Systems, 1999. PEDS '99. Proceedings of the IEEE 1999 International Conference on
Print_ISBN :
0-7803-5769-8
Type :
conf
DOI :
10.1109/PEDS.1999.792660
Filename :
792660
Link To Document :
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