CMOS device modeling for millimeter-wave power amplifiers

Author

Matsushita, Kota ; Takayama, Naoki ; Li, Ning ; Ito, Shogo ; Okada, Kenichi ; Matsuzawa, Akira

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan

fYear

2009

fDate

Jan. 9 2009-Dec. 11 2009

Firstpage

68

Lastpage

71

Abstract

Practical characterization of active and passive devices in CMOS technology is presented in this paper for designing millimeter-wave power amplifiers. Detailed modeling strategy for transmission line, T-junction, and transistor is explained with some actually-designed millimeter-wave amplifiers. A 4-stage PA is implemented in 65 nm CMOS process. A 20 dB power gain and a 9.9 dBm 1 dB output compression point are achieved at 60 GHz.

Keywords

CMOS integrated circuits; millimetre wave power amplifiers; semiconductor device models; CMOS device modeling; CMOS process; millimeter-wave power amplifiers; transmission line; CMOS technology; Circuit simulation; Frequency measurement; Gain measurement; Millimeter wave technology; Power amplifiers; Power transmission lines; Semiconductor device measurement; Semiconductor device modeling; Transmission line measurements; CMOS; characterization; millimeter wave; modeling; power amplifier; transmission line;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio-Frequency Integration Technology, 2009. RFIT 2009. IEEE International Symposium on

Conference_Location

Singapore

Print_ISBN

978-1-4244-5031-2

Electronic_ISBN

978-1-4244-5032-9

Type

conf

DOI

10.1109/RFIT.2009.5383690

Filename

5383690