Lange coupler design for Si-ICs up to 170GHz in 0.13um SiGe BiCMOS

Author

Wang, Lei ; Xiong, Yong-Zhong ; Zhang, Bo ; Teck-Guan, Lim ; Yuan, Xiaojun

Author_Institution

Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore

fYear

2009

fDate

Jan. 9 2009-Dec. 11 2009

Firstpage

64

Lastpage

67

Abstract

A design approach of Lange coupler for Si-substrate monolithic microwave integrated circuits is presented for frequency range up to 170 GHz. A combination of odd- and even-mode impedance theory and 3D EM simulation is proposed to improve the performance of Lange coupler. The value of the even number of the strip lines is determined based on the even-mode impedance calculation according to the process design rule in this work. Test structures have been fabricated in a 0.13 um SiGe technology. Measured result is in quite good agreement with simulated result.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC; electric impedance; integrated circuit design; 3D EM simulation; BiCMOS; Lange coupler design; SiGe; even-mode impedance theory; monolithic microwave integrated circuit; odd-mode impedance theory; size 0.13 mum; strip line; BiCMOS integrated circuits; Circuit simulation; Coupling circuits; Frequency; Germanium silicon alloys; Impedance; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Silicon germanium; EM simulation; Terahertz; lange coupler; odd- and even-mode impedance;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio-Frequency Integration Technology, 2009. RFIT 2009. IEEE International Symposium on

Conference_Location

Singapore

Print_ISBN

978-1-4244-5031-2

Electronic_ISBN

978-1-4244-5032-9

Type

conf

DOI

10.1109/RFIT.2009.5383698

Filename

5383698