Title :
A fully integrated Q-enhanced notch filter LNA for TX blocker suppression in FDD systems
Author :
Bormann, Dirk ; Werth, Tobias D. ; Kaehlert, Stefan ; Schmits, Christoph ; Heinen, Stefan
Author_Institution :
Dept. of Integrated Analog Circuits & RF Syst., RWTH Aachen Univ., Aachen, Germany
fDate :
Jan. 9 2009-Dec. 11 2009
Abstract :
An LNA with integrated Q-enhanced notch filter for use in FDD transceiver systems has been demonstrated. The amplifier core is coil less, made possible by the use of capacitive shunt-series feedback to simplify matching. Additionally, a Q-enhanced notch filter is integrated which attenuates TX blockers thus making an external interstage SAW filter redundant. A prototype was produced on a 65 nm CMOS process. Without filter operation it draws 16.6 mA from a 1.3V supply, with filter switched on the Q-enhancement adds 2.3-4.1 mA, depending on the demanded selectivity. The filter can be disconnected from the LNA. At 100 ¿ source impedance the input reflection factor S11 does not exceed -15 dB for the chosen frequency. The tuning range of the filter is 1500-1780 MHz for RX. The LNA supplies 24.5dB gain with a noise figure of NF = 2.3 dB. For 9 dB selectivity, the gain at RX drops to 20dB and the NF increases to 4.1 dB. The point where the RX gain drops 1dB due to a TX blocker is increased from -23.3 dBm to -19.5 dBm thus showing a proof-of-concept.
Keywords :
CMOS integrated circuits; feedback amplifiers; frequency division multiplexing; low noise amplifiers; notch filters; surface acoustic wave filters; transceivers; CMOS process; FDD transceiver systems; SAW filter; TX blocker suppression; capacitive shunt-series feedback; current 16.6 mA; frequency 1500 MHz to 1780 MHz; gain 24.5 dB; integrated Q-enhanced notch filter LNA; noise figure 2.3 dB; size 65 nm; voltage 1.3 V; Acoustic reflection; CMOS process; Coils; Feedback; Frequency; Impedance; Noise measurement; Prototypes; SAW filters; Transceivers;
Conference_Titel :
Radio-Frequency Integration Technology, 2009. RFIT 2009. IEEE International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-5031-2
Electronic_ISBN :
978-1-4244-5032-9
DOI :
10.1109/RFIT.2009.5383699