Title :
A new unified model for channel thermal noise of deep sub-micron RFCMOS
Author :
Ong, S.N. ; Chew, K.W.J. ; Yeo, K.S. ; Chan, L.H.K. ; Loo, X.S. ; Boon, C.C. ; Do, M.A.
Author_Institution :
Nanyang Technol. Univ., Singapore, Singapore
fDate :
Jan. 9 2009-Dec. 11 2009
Abstract :
A new unified model for circuit simulation is presented to predict the high frequency channel thermal noise of deep sub-micron MOSFETs in strong inversion region. Based on the new channel thermal noise model, the simulated channel thermal noise spectral densities of the devices fabricated in a 0.13 ¿m RFCMOS technology process are compared to the channel noise directly extracted from RF noise measurements.
Keywords :
CMOS integrated circuits; circuit simulation; integrated circuit noise; radiofrequency integrated circuits; thermal noise; channel thermal noise model; circuit simulation; deep submicron RFCMOS; size 0.13 mum; Circuit noise; Circuit simulation; Integrated circuit noise; MOSFETs; Noise generators; Noise measurement; Predictive models; Radio frequency; Semiconductor device noise; Thermal degradation; Channel thermal noise; MOSFET; high-frequency noise modeling; mobility degradation; noise of deep sub-micron MOSFET; vertical electric field;
Conference_Titel :
Radio-Frequency Integration Technology, 2009. RFIT 2009. IEEE International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-5031-2
Electronic_ISBN :
978-1-4244-5032-9
DOI :
10.1109/RFIT.2009.5383701
