Integration of RF MEMS switch with MMIC pHEMT and passive devices on GaAs

Author

Lee, Kok-Yan ; Meng, Seah Yong ; Sen, Ang Kian ; Ing, Ng Geok ; Hong, Wang

Author_Institution

DSO Nat. Labs., Singapore, Singapore

fYear

2009

fDate

Jan. 9 2009-Dec. 11 2009

Firstpage

288

Lastpage

291

Abstract

Process integration of RF MEMS switches with MMIC pHEMT devices and passive components on GaAs has been developed. Measurement results of the RF MEMS switches showed a C_down/C_up ratio of approximately 20:1, pHEMT devices with gate periphery of 1.2 mm show an I_max of 400 mA/mm, with f_T and f_max of 60 GHz and 100 GHz, respectively. TaN resistors were measured at 65 Â¿/Â¿ sheet resistance, the MIM capacitors have a capacitance of 550 pF/mm² and the 5 turn spiral inductors have approximately 4.3 nH inductance.

Keywords

III-V semiconductors; MIM devices; MMIC; field effect transistor switches; gallium arsenide; microswitches; passive networks; resistors; GaAs; MIM capacitors; MMIC pHEMT; RF MEMS switch; frequency 60 GHz; passive devices; Capacitance measurement; Electrical resistance measurement; Gallium arsenide; Inductance measurement; MIM capacitors; MMICs; PHEMTs; Radiofrequency microelectromechanical systems; Resistors; Switches; HEMT; MIM capacitors; MMIC; RF MEMS;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio-Frequency Integration Technology, 2009. RFIT 2009. IEEE International Symposium on

Conference_Location

Singapore

Print_ISBN

978-1-4244-5031-2

Electronic_ISBN

978-1-4244-5032-9

Type

conf

DOI

10.1109/RFIT.2009.5383708

Filename

5383708