DocumentCode :
3155025
Title :
A high power-handling RF MEMS tunable capacitor using quadruple series capacitor structure
Author :
Yamazaki, Hiroaki ; Ikehashi, Tamio ; Saito, Tomohiro ; Ogawa, Etsuji ; Masunaga, Takayuki ; Ohguro, Tatsuya ; Sugizaki, Yoshiaki ; Shibata, Hideki
Author_Institution :
Device Process Dev. Center, Toshiba Corp., Yokohama, Japan
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
1138
Lastpage :
1141
Abstract :
This paper presents an RF MEMS tunable capacitor that achieves an excellent power-handling property with relatively low actuation voltage. The tunable capacitor consists of two fixed MIM (Metal-Insulator-Metal) capacitors and two MEMS capacitor elements, all connected in series. This quadruple series capacitor (QSC) structure enables reduction of the actuation voltage without sacrificing the power-handling capability, since the MIM capacitor reduces the RF voltage amplitude applied to the MEMS capacitors. The measured result demonstrates +36 dBm hot-switching at 85°C with 21V pull-in voltage.
Keywords :
MIM devices; capacitors; micromechanical devices; RF voltage amplitude; fixed metal-insulator-metal capacitors; high power-handling RF MEMS tunable capacitor; quadruple series capacitor structure; relatively low actuation voltage; temperature 85 degC; voltage 21 V; Dielectrics; Electrodes; Low voltage; MIM capacitors; Metal-insulator structures; Micromechanical devices; Radio frequency; Radiofrequency microelectromechanical systems; Springs; Tunable circuits and devices; Hot-switching; RF MEMS; power-handling; tunable capacitor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5518185
Filename :
5518185
Link To Document :
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