Relationship of dark current and doping concentration for MCT photodiode detector design

Hg1-xCdxTe (MCT) is the most important semiconductor alloy system for infrared (IR) detectors, and zero-bias resistance-area products (R₀A) is a crucial factor of MCT Photovoltaic detector´s performance whose value is determined by the dark current of photovoltaic detector. In this paper, with Synopsys device simulation software, both current-voltage characteristic and R₀A products of n-on-p MCT Photovoltaic Detector had been simulated and analyzed with varying implantation dose. The simulated results indicated that dark current and R₀A products depended distinctly upon the doping concentration of photovoltaic detectors, and the optimal doping concentration was obtained for n-on-p MCT Photovoltaic Detector.