• DocumentCode
    315562
  • Title

    SRAM yield estimation in the early stage of the design cycle

  • Author

    Kim, Von-Kyoung ; Chen, Tom

  • Author_Institution
    Sun Microsyst., SPARC Technol. Bus., Mountain View, CA, USA
  • fYear
    1997
  • fDate
    11-12 Aug 1997
  • Firstpage
    21
  • Lastpage
    26
  • Abstract
    This paper describes an early memory yield prediction model using a memory sensitive area model. The proposed sensitive area prediction model calculates the sensitive area of a memory block for a given process technology and memory capacity. The model is capable of predicting the yield of a memory block in the early design phase without the derailed knowledge of the physical layout. The use of such a model in the early design stage helps to improve product quality and to reduce cost
  • Keywords
    SRAM chips; integrated circuit layout; integrated circuit yield; statistical analysis; IC design; SRAM yield estimation; design cycle; early memory yield prediction model; memory sensitive area model; physical layout; Application specific integrated circuits; CMOS technology; Costs; Logic; Predictive models; Random access memory; SRAM chips; Sun; Wires; Yield estimation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Technology, Design and Testing, 1997. Proceedings., International Workshop on
  • Conference_Location
    San Jose, CA
  • ISSN
    1087-4852
  • Print_ISBN
    0-8186-8099-7
  • Type

    conf

  • DOI
    10.1109/MTDT.1997.619390
  • Filename
    619390