Abstract :
Unique, high-performance components are utilized between the air or fiber-optic media interface and baseband/digital signal processing functions. TriQuint and other suppliers have developed power amplifiers, filters, duplexers, switches, phase shifters, and frequency conversion components specifically for this niche in systems ranging from RF-frequency cellular handsets to millimeter-wave frequency point-to-point radio transceivers. Examples of the use of specialized front-end technologies are: combining surface acoustic wave devices with GaAs switches and power amplifies in a handset modules, linear millimeter-wave power amplifiers for point-to-point radio links, millimeter wave switches using GaAs PIN diodes, and combining GaAs HBT, PHEMT, and VPIN technology in a 77-GHz Tx/Rx front-end for automotive radar. Finally, future GaN HEMT technology is showcased by discrete transistors setting new levels of power density
Keywords :
bipolar MIMIC; cellular radio; field effect MIMIC; gallium arsenide; gallium compounds; heterojunction bipolar transistors; high electron mobility transistors; millimetre wave bipolar transistors; millimetre wave diodes; millimetre wave field effect transistors; millimetre wave power amplifiers; p-i-n diodes; radio links; road vehicle radar; surface acoustic wave devices; transceivers; GaAs; GaN; HBT; HEMT technology; MIMIC; MMIC; PHEMT; PIN diodes; VPIN technology; automotive radar; cellular handsets; discrete transistors; duplexers circuit; filters circuit; frequency conversion components; handset modules; high-performance components; microwave front-end; millimeter wave switches; millimeter-wave front-end; millimeter-wave power amplifiers; phase shifters; point-to-point radio links; point-to-point radio transceivers; surface acoustic wave devices; switches circuit; MIMICs; MMICs;
