The Role and Mechanism of Fe-ion Bombardment in creating highly resistive InGaAs layers

Author

Subramaniam, S.C. ; Rezazadeh, A.A.

Author_Institution

Electromagn. Res. Centre, Manchester Univ.

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

17

Lastpage

20

Abstract

The electrical behavior of InGaAs following Fe-ion bombardment at 77K temperature in n- and p-type InGaAs structures have been investigated in this paper. Maximum resistivity of ~4times10⁶ Omega/sq and ~7times10⁶ Omega/sq at optimum annealing temperatures of ~250 and 600degC has been determined for p- and n-type InGaAs materials, respectively. These thermally stable high resistive regions in InGaAs due to Fe-ion bombardment are close to the intrinsic limit of InGaAs. Fe acceptor ionization energy of ~0.35 eV have been determined from temperature-dependant study. Good agreement has been observed between the experimental results and that of the physical model developed to observe the effects of Fe⁺ in InGaAs material

Keywords

III-V semiconductors; electrical resistivity; gallium arsenide; indium compounds; ion implantation; ionisation; iron; 600 C; 77 K; Fe; Fe acceptor ionization energy; Fe-ion bombardment; InGaAs; InGaAs layers; InGaAs material; n-type InGaAs structures; p-type InGaAs structures; thermal stability; Annealing; Conductivity; Electric resistance; Indium gallium arsenide; Indium phosphide; Iron; Photoconducting materials; Photonic band gap; Semiconductor materials; Temperature; Activation energy; annealing; electrical resistivity; semiconductor ion implantation;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282738

Filename

4057561