Title :
The Role and Mechanism of Fe-ion Bombardment in creating highly resistive InGaAs layers
Author :
Subramaniam, S.C. ; Rezazadeh, A.A.
Author_Institution :
Electromagn. Res. Centre, Manchester Univ.
Abstract :
The electrical behavior of InGaAs following Fe-ion bombardment at 77K temperature in n- and p-type InGaAs structures have been investigated in this paper. Maximum resistivity of ~4times106 Omega/sq and ~7times106 Omega/sq at optimum annealing temperatures of ~250 and 600degC has been determined for p- and n-type InGaAs materials, respectively. These thermally stable high resistive regions in InGaAs due to Fe-ion bombardment are close to the intrinsic limit of InGaAs. Fe acceptor ionization energy of ~0.35 eV have been determined from temperature-dependant study. Good agreement has been observed between the experimental results and that of the physical model developed to observe the effects of Fe+ in InGaAs material
Keywords :
III-V semiconductors; electrical resistivity; gallium arsenide; indium compounds; ion implantation; ionisation; iron; 600 C; 77 K; Fe; Fe acceptor ionization energy; Fe-ion bombardment; InGaAs; InGaAs layers; InGaAs material; n-type InGaAs structures; p-type InGaAs structures; thermal stability; Annealing; Conductivity; Electric resistance; Indium gallium arsenide; Indium phosphide; Iron; Photoconducting materials; Photonic band gap; Semiconductor materials; Temperature; Activation energy; annealing; electrical resistivity; semiconductor ion implantation;
Conference_Titel :
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location :
Manchester
Print_ISBN :
2-9600551-8-7
DOI :
10.1109/EMICC.2006.282738
