Title :
Novel simulation of deep-submicron MOSFET circuits
Author :
Bruma, Serban ; Otten, Ralph H J M
Author_Institution :
Fac. of Electr. Eng., Delft Univ. of Technol., Netherlands
Abstract :
The effects of scaling down the MOSFET dimensions to the deep-submicron range lead to operating regions that may be modeled by locally linear equations. The piecewise linear simulator seems to be the obvious choice. Certain requirements must be satisfied by a PL simulator for the successful manipulation of the proposed MOSFET model. Simulation results demonstrate the efficiency in simulating large deep-submicron MOSFET circuits. Several levels of hierarchy can be simulated due to the uniform PL modeling technique
Keywords :
MOSFET circuits; circuit CAD; circuit analysis computing; piecewise-linear techniques; MOSFET circuits; MOSFET model; PL simulator; deep-submicron; piecewise linear simulator; CMOS technology; Circuit simulation; Energy consumption; Integrated circuit interconnections; Integrated circuit technology; MOSFET circuits; Piecewise linear techniques; Semiconductor device modeling; Very large scale integration; Voltage;
Conference_Titel :
Computer Design: VLSI in Computers and Processors, 1997. ICCD '97. Proceedings., 1997 IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-8186-8206-X
DOI :
10.1109/ICCD.1997.628850
