Indium Antimonide based Quantum Well FETs for Ultra-high Frequency, Low Power Dissipation Circuits

Author

Ashley, T. ; Buckle, L. ; Emeny, M.T. ; Fearn, M. ; Hayes, D.G. ; Hilton, K.P. ; Jefferies, R. ; Martin, T. ; Phillips, T.J. ; Powell, J. ; Tang, A.W.-H. ; Wallis, D. ; Wilding, P.J.

Author_Institution

QinetiQ, Malvern Technol. Centre

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

29

Lastpage

30

Abstract

Indium antimonide has the highest electron mobility and saturation velocity of any semiconductor, so has potential for ultra-high frequency operation with very low power dissipation. Unoptimised, uncooled quantum well heterojunction FETs, with gate length of 85nm, that have a cutoff frequency of 340GHz at only 0.5 V V_ds. The prospects of this technology for future microwave applications in excess of 100GHz are shown to be very promising

Keywords

field effect transistors; indium compounds; semiconductor quantum wells; 0.5 V; 340 GHz; 85 nm; electron mobility; low power dissipation circuits; quantum well FET; saturation velocity; ultra high frequency dissipation circuits; Circuits; Cutoff frequency; Doping; Electron mobility; Etching; FETs; Indium; Microwave technology; Power dissipation; Voltage; HFET; InSb; Indium antimonide; microwave; quantum well; terahertz; ultra-high frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282741

Filename

4057564