Title :
Indium Antimonide based Quantum Well FETs for Ultra-high Frequency, Low Power Dissipation Circuits
Author :
Ashley, T. ; Buckle, L. ; Emeny, M.T. ; Fearn, M. ; Hayes, D.G. ; Hilton, K.P. ; Jefferies, R. ; Martin, T. ; Phillips, T.J. ; Powell, J. ; Tang, A.W.-H. ; Wallis, D. ; Wilding, P.J.
Author_Institution :
QinetiQ, Malvern Technol. Centre
Abstract :
Indium antimonide has the highest electron mobility and saturation velocity of any semiconductor, so has potential for ultra-high frequency operation with very low power dissipation. Unoptimised, uncooled quantum well heterojunction FETs, with gate length of 85nm, that have a cutoff frequency of 340GHz at only 0.5 V Vds. The prospects of this technology for future microwave applications in excess of 100GHz are shown to be very promising
Keywords :
field effect transistors; indium compounds; semiconductor quantum wells; 0.5 V; 340 GHz; 85 nm; electron mobility; low power dissipation circuits; quantum well FET; saturation velocity; ultra high frequency dissipation circuits; Circuits; Cutoff frequency; Doping; Electron mobility; Etching; FETs; Indium; Microwave technology; Power dissipation; Voltage; HFET; InSb; Indium antimonide; microwave; quantum well; terahertz; ultra-high frequency;
Conference_Titel :
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location :
Manchester
Print_ISBN :
2-9600551-8-7
DOI :
10.1109/EMICC.2006.282741
