Millimeter-Wave Front-End Components in Metamorphic HEMT Technology

Author

Schlechtweg, M. ; Kallfass, I. ; Tessmann, A. ; Schwörer, C. ; Leuther, A.

Author_Institution

Fraunhofer Inst. for Appl. Solid-State Phys., Freiburg

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

31

Lastpage

34

Abstract

We report on the latest results of millimeter-wave IC components realized using IAF´s metamorphic HEMT technology, ranging from small-signal low-noise amplifiers to nonlinear applications such as power amplifiers and frequency converters. A G-band four-stage cascode amplifier MMIC achieves 21 dB gain at 220 GHz. At 155 GHz, a two-stage cascode design reaches 15 dB gain with a noise figure of 4 dB. Frequency conversion is demonstrated in a doubler, achieving more than 0 dBm output power over the frequency range from 180 to 220 GHz. The same doubler is combined with a resistive mixer to form a G-band down-converter with as low as 10 dB conversion loss. At 94 GHz, a two-stage power amplifier MMIC achieves 23.3 dBm

Keywords

HEMT integrated circuits; field effect MIMIC; frequency multipliers; low noise amplifiers; millimetre wave power amplifiers; 10 dB; 15 dB; 155 to 220 GHz; 21 dB; 4 dB; G-band down-converter; G-band four-stage cascode amplifier MMIC; MODFET; doubler circuit; frequency conversion; metamorphic HEMT technology; millimeter wave FET integrated circuits; millimeter-wave IC components; millimeter-wave front-end components; resistive mixer; Application specific integrated circuits; Frequency conversion; Gain; Low-noise amplifiers; MMICs; Millimeter wave technology; Noise figure; Power amplifiers; Power generation; mHEMTs; MODFETs; Millimeter wave FET integrated circuits; Millimeter wave technology;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282742

Filename

4057565