DocumentCode
3156016
Title
Detailed Analysis of DC-RF Dispersion in AlGaN/GaN HFETs using Waveform Measurements
Author
Roff, Chris ; McGovern, Peter ; Benedikt, Johannes ; Tasker, Paul J. ; Balmer, R.S. ; Wallis, D.J. ; Hilton, K.P. ; Maclean, J.O. ; Hayes, D.G. ; Uren, M.J. ; Martin, T.
Author_Institution
Cardiff Sch. of Eng., Cardiff Univ.
fYear
2006
fDate
10-13 Sept. 2006
Firstpage
43
Lastpage
45
Abstract
Detailed time-domain IV waveforms at RF frequencies are employed for characterisation of AlGaN/GaN HFETs in order to steer and advance device development. The IV time-domain data is used to isolate the separate effects of pinch-off and knee-walkout behaviour in limiting device performance. Furthermore, the waveform measurements which are obtained with a previously unseen level of detail, allowed the direct extraction of optimum device operating conditions
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; AlGaN-GaN; DC-RF dispersion; HFET; time-domain waveforms; waveform measurements; Aluminum gallium nitride; Dispersion; Gallium nitride; HEMTs; MODFETs; Microwave measurements; Pulse measurements; Radio frequency; Time domain analysis; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location
Manchester
Print_ISBN
2-9600551-8-7
Type
conf
DOI
10.1109/EMICC.2006.282745
Filename
4057568
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