DocumentCode
315605
Title
Patterning of silicide layers by local oxidation
Author
Klinkhammer, F. ; Dolle, M. ; Mantl, S.
Author_Institution
Inst. fur Schicht- und Ionentech., Forschungszentrum Julich GmbH, Germany
fYear
1997
fDate
16-19 March 1997
Firstpage
199
Lastpage
200
Abstract
Recently we have presented a novel method for patterning of silicide layers based on local oxidation. In this contribution we reexamine the physical diffusion model of local oxidation of epitaxial silicide layers and discuss its use for patterning. Oxidation of silicides is an important issue for silicon technology since it allows the formation of metallic interconnects with a protective SiO/sub 2/ coating.
Keywords
cobalt compounds; metallic epitaxial layers; metallisation; oxidation; surface diffusion; CoSi/sub 2/; diffusion model; epitaxial silicide layer; local oxidation; metallic interconnect; patterning; protective SiO/sub 2/ coating; silicon technology; Atomic layer deposition; Molecular beam epitaxial growth; Oxidation; Protection; Scanning electron microscopy; Semiconductor process modeling; Silicides; Silicon; Stress; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location
Villard de Lans, France
ISSN
1266-0167
Type
conf
DOI
10.1109/MAM.1997.621120
Filename
621120
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