Solid solution disilicide thin films: formation, structure, properties and application

Author

Dvorina, L.

Author_Institution

Inst. of Problems of Mater., Acad. of Sci., Kiev, Ukraine

fYear

1997

fDate

16-19 March 1997

Firstpage

201

Lastpage

202

Abstract

The mechanism of solid phase interaction of transition metals with silicon in quasibinary systems CrSi/sub 2/-MeSi/sub 2/ (Me-Ti,Ta,Mo, and other) for film structures was examined. The Cr-Me-Si layers have been prepared by sputtering from solid solution disilicide targets, produced by the method of powder metallurgy on vacuum technology. The methods of electronography, in situ measurements of electrical resistance, elevation of the annealing temperature are used to establish regularities in formation of films of the studied disilicide solid solution. The sample composition was determined using Auger electron spectroscopy.

Keywords

annealing; chemical interdiffusion; chromium compounds; electrical resistivity; metallic thin films; solid solutions; sputtered coatings; Auger electron spectroscopy; annealing; composition; electrical resistance; electronography; powder metallurgy; quasibinary system; silicide formation; solid phase interaction; solid solution; sputtering; structure; transition metal disilicide thin film; vacuum technology; Electric resistance; Electric variables measurement; Electrical resistance measurement; Powders; Semiconductor films; Silicon; Solids; Sputtering; Transistors; Vacuum technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop

Conference_Location

Villard de Lans, France

ISSN

1266-0167

Type

conf

DOI

10.1109/MAM.1997.621121

Filename

621121