DocumentCode :
315607
Title :
Band structure and transport properties of semiconducting rhenium silicide thin films grown epitaxially an silicon (111)
Author :
Muret, P. ; Ali, I. ; Nguyen, T.T.A.
Author_Institution :
Lab. d´´Etudes des Proprietes Electron. des Solides, CNRS, Grenoble, France
fYear :
1997
fDate :
16-19 March 1997
Firstpage :
203
Abstract :
Summary form only given, as follows. Transport properties of semiconducting rhenium silicide thin films have been measured, in directions both parallel and perpendicular to the silicon substrate. Optical properties are also reassessed. This silicide, which shows a commensurable fit with the (111) surface of silicon, has been epitaxially grown on such substrates by reactive deposition at 650/spl deg/C of the simultaneous flux of rhenium and silicon atoms coming from two sublimation cells. Post-anneals at 750/spl deg/C and 850/spl deg/C in hydrogen partial pressure have been done. From Hall effect measurements, the semiconducting silicide appears as p-type in the first case and n-type in the second case, with a lower concentration of residual doping. But in any case, the intrinsic regime is almost reached near room temperature, in agreement with the band gap deduced from optical absorption measurements. The band gap is also found as the difference between the two transition thresholds observed in the internal photoemission response, evaluated from the photocurrent induced by illumination in the silicide-silicon heterojunction. Band discontinuities with silicon are also deduced. Conductivity and Hall effect measurements on high resistivity silicon substrates show that the electron mobility is at least 200 cm2/Vs at ambient temperature and in excess of 1000 cm/sup 2//Vs at the liquid nitrogen temperature. These facts indicate that the rhenium silicide thin film quality has been dramatically improved by the aforementioned thermal treatment and may be used in photodetector devices in the infrared range up to wavelengths near 5 /spl mu/m with the inherent advantage of its compatibility with silicon technology.
Keywords :
Hall effect; annealing; electrical conductivity; electron mobility; energy gap; infrared detectors; optical properties; photoconductivity; photodetectors; rhenium compounds; semiconductor epitaxial layers; semiconductor materials; 750 C; 850 C; Hall effect measurements; ReSi-Si; Si; Si (111) substrate; band discontinuities; band gap; band structure; conductivity measurements; electron mobility; epitaxially grown films; infrared range; internal photoemission response; intrinsic regime; n-type; optical absorption measurements; optical properties; p-type; photodetector devices; post-anneals; reactive deposition; semiconducting ReSi thin films; silicide-silicon heterojunction; sublimation cells; transport properties; Conductivity; Hall effect; Optical films; Photonic band gap; Semiconductivity; Semiconductor thin films; Silicides; Silicon; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
ISSN :
1266-0167
Type :
conf
DOI :
10.1109/MAM.1997.621122
Filename :
621122
Link To Document :
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