Title :
Very High Performance GaN HEMT devices by Optimized Buffer and Field Plate Technology
Author :
Romanini, P. ; Peroni, M. ; Lanzieri, C. ; Cetronio, A. ; Calori, M. ; Passaseo, A. ; Poti, B. ; Chini, A. ; Mariucci, L. ; Di Gaspare, Alessandra ; Teppati, V. ; Camarchia, V.
Author_Institution :
Eng. Div., Selex Sistemi Integrati S.p.A., Roma
Abstract :
One of the main expected benefits of AlGaN HEMT technology for microwave applications is related to the higher operating bias voltage achievable with these devices. However, various technological issues, concerning material properties and device technology must be properly tailored to fully exploit the potential of that kind of devices. In this work we report on the realization of HEMT device showing improved performance in terms of breakdown voltage, device isolation and reverse current leakage achieved by improved epilayer buffer properties and optimized field plate gate geometry. In particular the low defect density and the high resistivity obtained by using an HT-AlN crystallization layer for the growth of the GaN layer has lead to an effective 2DEG carrier concentration of 8 times 1012 cm-2 with related mobility of 1700cm2/Vs and corresponding devices with a very high voltage breakdown (VB > 200V), excellent active device isolation and limited reverse current leakage
Keywords :
gallium compounds; power HEMT; semiconductor device breakdown; semiconductor growth; HEMT devices; MODFET; breakdown voltage; crystallization layer; device isolation; electron beam lithography; epilayer buffer properties; epitaxial growth; field plate technology; microwave applications; optimized buffer; optimized field plate gate geometry; power FET; reverse current leakage; semiconductor device breakdown; Aluminum gallium nitride; Conductivity; Gallium nitride; Geometry; HEMTs; Isolation technology; Material properties; Microwave devices; Microwave technology; Voltage; Electron beam lithography; Epitaxial growth; MODFETs; Power FETs; Semiconductor device breakdown;
Conference_Titel :
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location :
Manchester
Print_ISBN :
2-9600551-8-7
DOI :
10.1109/EMICC.2006.282750