DocumentCode :
3156130
Title :
Active gate control strategy of series connected IGBTs for high power PWM inverter
Author :
Hong, Soonwook ; Lee, Yong-Geun
Author_Institution :
R&D Inst., Hyosung Ind. Co. Ltd., Seoul, South Korea
Volume :
2
fYear :
1999
fDate :
1999
Firstpage :
646
Abstract :
This paper describes an operation of series connected IGBT gate drive circuit with a closed loop voltage control in high voltage inverter applications. The purpose of voltage control is to instantaneously limit large overvoltage applied to certain IGBTs in inverter valves during switching transients and off-state IGBT voltages and to maintain the voltage to an acceptable level. The performance of the gate drive circuit is examined experimentally by the series connection of four different rated IGBTs with conventional snubber circuits. The experimental results show the voltage balancing by the voltage control with wide variations in imbalance conditions
Keywords :
PWM power convertors; closed loop systems; driver circuits; insulated gate bipolar transistors; snubbers; switching circuits; switching transients; voltage control; active gate control strategy; closed loop voltage control; gate drive circuit; high power PWM inverter; high voltage inverter applications; imbalance conditions; inverter valves; off-state IGBT voltages; overvoltage limiting; series connected IGBT; snubber circuits; switching transients; voltage balancing; voltage control; Circuits; Frequency; Insulated gate bipolar transistors; Power system transients; Pulse width modulation; Pulse width modulation inverters; Snubbers; Steady-state; Thyristors; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and Drive Systems, 1999. PEDS '99. Proceedings of the IEEE 1999 International Conference on
Print_ISBN :
0-7803-5769-8
Type :
conf
DOI :
10.1109/PEDS.1999.792747
Filename :
792747
Link To Document :
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