Enhanced Schottky Gate and Pulsed IV Characteristics of AlGaN-GaN HEMT on Si with Gate-annealing and SiNX Passivation

Author

Her, Jin-Cherl ; Kim, Sung-Won ; Jang, Kyung-Chul ; Seol, Gyung-Seon ; Han, Min-Koo ; Oh, Jae-Eung ; Seo, Kwang-Seok

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ.

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

69

Lastpage

71

Abstract

Using the post-gate-annealing, the SiN_x passivation and the post-passivation-annealing, the gate characteristics of 0.4 mum Al _0.26GaN-GaN HEMT on Si were successfully improved. With SiNx passivation using remote-plasma enhanced chemical vapor deposition, the current collapse was effectively suppressed. And it was found that annealing after passivation can improve the gate characteristics without serious change of the pulsed IV characteristics of the devices. As a result, maximum extrinsic transconductance, IDSS and pulsed drain-source current are increased by 12 %, 32 % and 31 %, respectively. And the gate-drain breakdown voltage was increased from 23 V to 80 V

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; passivation; plasma CVD; silicon compounds; wide band gap semiconductors; 0.4 micron; 23 V; 80 V; AlGaN-GaN; HEMT; Schottky contacts; Schottky gate; SiN; SiN_x passivation; current collapse; gate annealing; high electron mobility transistor; pulsed IV characteristics; remote plasma enhanced chemical vapor deposition; surfaces; trapping; Aluminum gallium nitride; Annealing; Chemical vapor deposition; Computer science; Electronics packaging; HEMTs; Passivation; Plasma temperature; Pulse measurements; Substrates; Annealing; Schottky contacts; high electron mobility transistor; passivation; surfaces; trapping;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282752

Filename

4057575