DocumentCode :
3156191
Title :
Antiferroelectric to ferroelectric phase switching thin films in the lead zirconate stannate titanate solid solution system
Author :
Gaskey, C.J. ; Udayakumar, K.R. ; Chen, H.D. ; Cross, L.E.
Author_Institution :
Mater. Res. Lab., Pennsylvania State Univ., University Park, PA, USA
fYear :
1991
fDate :
33457
Firstpage :
416
Lastpage :
418
Abstract :
Thin films of lead zirconate stannate titanate (PSZT) with slight additions of niobium and lanthanum have been prepared by the sol-gel, spin coat process. Antiferroelectric tetragonal and orthorhombic compositions have been evaluated on the criteria of P-E loop squareness, maximum polarization and field induced strain for the applications of energy storage and conversion in integrated devices. The orthorhombic compositions in both the niobium and lanthanum doped systems have shown square loop hysteretic behavior with large switchable polarizations (30-40 μC/cm2), and field-induced strains of 0.33% have been measured in the niobium doped system, thus both systems provide attractive possibilities for practical use
Keywords :
dielectric hysteresis; dielectric polarisation; ferroelectric materials; ferroelectric switching; ferroelectric thin films; lead compounds; niobium; piezoceramics; sol-gel processing; P-E loop squareness; PZT; PbZrO3TiO3; antiferroelectric to ferroelectric phase switching; energy storage; field induced strain; integrated devices; maximum polarization; orthorhombic; sol-gel processing; solid solution; spin coat process; square loop hysteretic behavior; tetragonal; thin films; Capacitive sensors; Energy storage; Ferroelectric materials; Hysteresis; Lanthanum; Niobium; Polarization; Strain measurement; Titanium compounds; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location :
University Park, PA
Print_ISBN :
0-7803-1847-1
Type :
conf
DOI :
10.1109/ISAF.1994.522390
Filename :
522390
Link To Document :
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