InP DHBT based MMICs for [DC-20 GHz] Signal Sampling

Author

Hassan El Aabbaoui ; Gorisse, Benoît ; Benlarbi-Delaï, Aziz ; Rolland, Nathalie ; Allouche, Virginie ; Fel, Nicolas ; Riondet, Bernard ; Leclerc, Pascal ; Rolland, Paul-Alain

Author_Institution

Departement Hyperfrequence et Semiconducteur, Lille Univ., Villeneuve d´´Ascq

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

87

Lastpage

90

Abstract

Targeting [DC-20 GHz] bandwidth and 40 GS/s sampling rate for high dynamic range (60 dB) ultra fast signal analysis, we present the preliminary experimental results obtained on InP-InGaAs-InP double heterojunction bipolar transistor based MMIC (FT = 180 GHz). The critical circuits leading to wide band signal sampling operation are made of high bandwidth switched emitter follower (SEF) and high bandwidth buffer. They are realized and tested both in time and frequency domains. They exhibit performances in terms of isolation and bandwidth compatible with the targeted objectives

Keywords

III-V semiconductors; bipolar MMIC; gallium arsenide; heterojunction bipolar transistors; indium compounds; signal sampling; 180 GHz; 20 GHz; DHBT; InP-InGaAs-InP; MMIC; analog to digital converters; double heterojunction bipolar transistor; high bandwidth buffer; high bandwidth switched emitter follower; signal sampling; ultra fast signal analysis; Bandwidth; Circuits; DH-HEMTs; Double heterojunction bipolar transistors; Dynamic range; Indium phosphide; MMICs; Sampling methods; Signal analysis; Signal sampling; Analog to Digital Converters; Ultra Fast Sampling; high dynamic; very low jitter;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282757

Filename

4057580