DocumentCode
315634
Title
The impact of SOI MOSFETs on low power digital circuits
Author
Tseng, Ying-Che ; Chin, Steven C. ; Woo, Jason C S
Author_Institution
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fYear
1997
fDate
18-20 Aug. 1997
Firstpage
243
Lastpage
246
Abstract
Encouraged by the promising results of SOI device-based studies, CMOS on SOI has recently been suggested for the low power digital applications. In this paper, the crucial effects of SOI device characteristics on switching circuits is investigated, and the relative merits of SOI and bulk devices for circuit applications are compared. As a result, the impact of the floating body on SOI circuit performance and the related device solutions are discussed.
Keywords
CMOS digital integrated circuits; MOSFET; clocks; delays; silicon-on-insulator; switching circuits; timing; SOI MOSFETs; device solutions; floating body; low power digital circuits; switching circuits; Application software; Digital circuits; Logic circuits; MOSFETs; Parasitic capacitance; Permission; Power dissipation; Power supplies; Switching circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Low Power Electronics and Design, 1997. Proceedings., 1997 International Symposium on
Conference_Location
Monterey, CA, USA
Print_ISBN
0-89791-903-3
Type
conf
Filename
621291
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