Title :
Nonlinear and Memory Characterization of GaAs FET Devices and FET-Based Power Amplifier Circuits
Author :
Santiago, Jon ; Portilla, Joaquín ; Fernández, Tomás
Author_Institution :
Dept. of Electr. & Electron., Basque Country Univ., Bilbao
Abstract :
An experimental study of nonlinear and memory effects at device and power-amplifier circuit level is presented in this paper. Effects produced by the device itself have been isolated from those caused by the introduction of particular biasing and matching networks in the power amplifier design. The influence of biasing and matching network topologies over nonlinear, short- and long-term memory behaviour of power amplifiers has been experimentally determined. The results of these measurements have been related with simulations of the impedance on the drain of the transistor for different prototypes. Finally, some guidelines for memoryless PA design can be extracted
Keywords :
Schottky gate field effect transistors; gallium arsenide; intermodulation distortion; power amplifiers; FET-based power amplifier circuits; GaAs; MESFET power amplifiers; intermodulation distortion; matching networks; memory characterization; network topologies; nonlinear characterization; nonlinear distortion; pulse measurements; Circuits; Distortion measurement; Gallium arsenide; Intermodulation distortion; Microwave FETs; Network topology; Performance evaluation; Power amplifiers; Pulse amplifiers; Pulse measurements; Impedance; MESFET power amplifiers; intermodulation distortion; nonlinear distortion; pulse measurements;
Conference_Titel :
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location :
Manchester
Print_ISBN :
2-9600551-8-7
DOI :
10.1109/EMICC.2006.282760
