77GHz Low Noise Sub Block MMICs with 120 nm In0.4AlAs/In0.35GaAs Metamorphic HEMTs

Author

Kim, Sung-Won ; Kim, Dong-Hwan ; Her, Jin-Churl ; Jang, Kyung-Chul ; Choi, Woo-Yeol ; Kwon, Young-Woo ; Seo, Kwang-Seok

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ.

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

103

Lastpage

106

Abstract

77 GHz CPW low noise sub block (LNB) MMICs, which are consisted of a 3 stage LNA and a resistive mixer, have been successfully developed by using 120nm In_0.4AlAs/In_0.35GaAs metamorphic high electron mobility transistors (MHEMTs). The devices show an extrinsic transconductance g_m of 760 mS/mm, a maximum drain current of 750 mA/mm, and a gate drain breakdown voltage of -8.5 V. A cut-off frequency (f_T) of 172 GHz and a maximum oscillation frequency (f_max) of over 300 GHz are achieved. The LNA exhibited small signal gain of 19.2 dB and conversion gain of the LNB is measured to be 11 dB at 500 kHz IF

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; coplanar waveguide components; field effect MIMIC; gallium arsenide; indium compounds; low noise amplifiers; millimetre wave amplifiers; millimetre wave mixers; -8.5 V; 11 dB; 120 nm; 172 GHz; 19.2 dB; 3 stage low noise amplifier; 500 kHz; 77 GHz; In_0.4AlAs-In_0.35GaAs; coplanar waveguide; gate drain breakdown voltage; low noise sub block MMIC; metamorphic HEMT; metamorphic high electron mobility transistors; resistive mixer; Coplanar waveguides; Cutoff frequency; Gain; Gallium arsenide; HEMTs; Indium compounds; Indium phosphide; Integrated circuit noise; MMICs; mHEMTs; cut-off frequency; low noise amplifier; metamorphic HEMT; resistive mixer; transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282761

Filename

4057584