Ultra Low Noise Amplifier in SiGe:C Technology for 802.11a, b and g WLAN Applications

Author

Forstner, Hans-Peter ; Dehé, Alfons ; Eisener, Bernd ; Ettinger, Klaus ; Gerlach, Udo ; Jentzsch, Andrea ; Klein, Wolfgang ; Lehrer, Christian

Author_Institution

Infineon Technol., Neubiberg

fYear

2006

fDate

10-13 Sept. 2006

Firstpage

126

Lastpage

128

Abstract

A dual band low noise and low cost wireless LAN amplifier has been fully integrated in a commercial SiGe:C bipolar technology using a highly doped silicon substrate. Outstanding low noise figures of 0.9dB at 2.4GHz and 1.45dB at 6GHz have been measured. Current consumption is 11mA in the low band and 17 mA in the high band, out off a voltage supply of 3.2V, and stabilized by a bandgap voltage reference. Low band gain is 13.5dB with an IP-1dB of -7dBm and IIP3 of +4dBm. High band gain is 20dB with an IP-1dB of -9dBm and IIP3 of +3dBm

Keywords

Ge-Si alloys; IEEE standards; bipolar transistor circuits; carbon; low noise amplifiers; microwave amplifiers; wireless LAN; 0.9 dB; 1.45 dB; 11 mA; 13.5 dB; 17 mA; 2.4 GHz; 20 dB; 3.2 V; 6 GHz; 802.11a applications; 802.11b applications; 802.11g applications; SiGe:C; WLAN applications; bipolar technology; highly doped silicon substrate; ultra low noise amplifier; wireless LAN amplifier; Costs; Dual band; Inductors; Low-noise amplifiers; Microwave technology; Noise figure; Semiconductor device noise; Silicon; Voltage; Wireless LAN; LNA; SiGe:C; WLAN; dual band; low noise amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

European Microwave Integrated Circuits Conference, 2006. The 1st

Conference_Location

Manchester

Print_ISBN

2-9600551-8-7

Type

conf

DOI

10.1109/EMICC.2006.282767

Filename

4057590