Title :
Design of a Fully Integrated Switchable Transistor CMOS LNA for 2.1 / 2.4 GHz Application
Author :
Cheng, Wang-Chi ; Ma, Jian-Guo ; Yeo, Kiat-Seng ; DO, Manh-Anh
Author_Institution :
Dept. of Electron. Eng., Chinese Univ. of Hong Kong
Abstract :
This paper presents a fully integrated switchable transistor CMOS LNA for 2.1 GHz and 2.4 GHz applications. The LNA is designed using 0.18 mum 1P6M CMOS technology. It matches the input in two frequency bands easily without using extra on-chip spiral inductor, compared with (Zhenbiao Li, 2004), (Hashemi, 2001). The post layout simulation exhibits input matching with S11 of -12.9 dB at 2.1 GHz and -24.1 dB at 2.4 GHz respectively. Moreover, it achieves power gain of 14 dB and 14.6 dB, noise figure 3.6 dB and 3.7 dB, and IIP3 -1.3 dBm and 2.6 dBm respectively
Keywords :
CMOS integrated circuits; UHF amplifiers; UHF integrated circuits; low noise amplifiers; 0.18 micron; 14 dB; 14.6 dB; 2.1 GHz; 2.4 GHz; 3.6 dB; 3.7 dB; CMOS LNA; CMOS technology; UHF amplifiers; low noise amplifiers; post layout simulation; switchable transistor; CMOS technology; Design engineering; Dual band; Frequency; Impedance matching; Inductors; Noise figure; Spirals; Switching circuits; Transceivers;
Conference_Titel :
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location :
Manchester
Print_ISBN :
2-9600551-8-7
DOI :
10.1109/EMICC.2006.282769
