Design of a Fully Integrated Switchable Transistor CMOS LNA for 2.1 / 2.4 GHz Application

This paper presents a fully integrated switchable transistor CMOS LNA for 2.1 GHz and 2.4 GHz applications. The LNA is designed using 0.18 mum 1P6M CMOS technology. It matches the input in two frequency bands easily without using extra on-chip spiral inductor, compared with (Zhenbiao Li, 2004), (Hashemi, 2001). The post layout simulation exhibits input matching with S₁₁ of -12.9 dB at 2.1 GHz and -24.1 dB at 2.4 GHz respectively. Moreover, it achieves power gain of 14 dB and 14.6 dB, noise figure 3.6 dB and 3.7 dB, and IIP₃ -1.3 dBm and 2.6 dBm respectively