Title :
Precursor dependent properties of Ba1-xSrxTiO 3 thin films fabricated by sol-gel method
Author :
Kim, J. ; Kwun, S.I. ; Yoon, J.-G.
Author_Institution :
Dept. of Phys., Seoul Nat. Univ., South Korea
Abstract :
Thin films of barium strontium titanate, Ba1-xSrx TiO3, were deposited on Si and ITO/glass substrates with 200~300 nm thickness by sol-gel method. The precursor solution of BST was prepared by mixing the 0.2 M precursor solutions of BaTiO3 and SrTiO3 with proper molar ratio. The X-ray diffraction (XRD) patterns show characteristic peaks with weak and broad features indicating that the polycrystalline BST film has poor crystallinity. The grain size and the surface morphology of the films were investigated by atomic force microscope (AFM). Especially, dependence of the film structures on the treatments of precursor solution such as hydrolysis and modification with acetic acid was investigated. The I-V (current-voltage) characteristics of the films was also dependent on the precursor structure. The C-V (capacitance-voltage) behavior of the films with MIS (metal-insulator-semiconductor) and MIM (metal-insulator-metal) structures were studied. Also, dielectric permittivity which was very strongly dependent on the crystallinity of the films was discussed in conjunction with precursor structures
Keywords :
MIM structures; MIS structures; X-ray diffraction; atomic force microscopy; barium compounds; ferroelectric materials; ferroelectric thin films; grain size; permittivity; sol-gel processing; strontium compounds; 200 to 300 nm; Ba1-xSrxTiO3 thin films; BaSrTiO3; ITO; ITO/glass substrate; InSnO; MIM structure; MIS structure; Si; Si substrate; X-ray diffraction; atomic force microscopy; crystallinity; dielectric permittivity; film structure; grain size; hydrolysis; precursor dependent properties; sol-gel method; surface morphology; Atomic force microscopy; Barium; Binary search trees; Capacitance-voltage characteristics; Crystallization; Grain size; Metal-insulator structures; Semiconductor thin films; Sputtering; Strontium;
Conference_Titel :
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location :
University Park, PA
Print_ISBN :
0-7803-1847-1
DOI :
10.1109/ISAF.1994.522392
