Title :
A current-based model for the MOS transistor
Author :
Cunha, A.I.A. ; Gouveia-Filho, O.C. ; Schneider, M.C. ; Galup-Montoro, C.
Author_Institution :
Lab. de Instrum. Eletronica, Univ. Fed. de Santa Catarina, Florianopolis, Brazil
Abstract :
This paper presents a physics-based model for the MOS transistor, suitable for circuit design and simulation and valid from weak to strong inversion. Each static or dynamic characteristic is accurately described by a single-piece function of two saturation currents
Keywords :
MOSFET; circuit analysis computing; integrated circuit design; semiconductor device models; MOS transistor; MOSFET; circuit design; circuit simulation; current-based model; dynamic characteristics; physics-based model; saturation currents; single-piece function; static characteristics; strong inversion; weak inversion; Analog integrated circuits; Capacitance; Circuit synthesis; Electronic mail; Instruments; Integrated circuit modeling; Linear predictive coding; MOSFET circuits; Parameter extraction; Voltage;
Conference_Titel :
Circuits and Systems, 1997. ISCAS '97., Proceedings of 1997 IEEE International Symposium on
Print_ISBN :
0-7803-3583-X
DOI :
10.1109/ISCAS.1997.621439
